32714hk pa no.a2320-1/6 http://onsemi.com semiconductor components industries, llc, 2014 march, 2014 EFC4630R n-channel power mosfet 24v, 6a, 45m ? , dual efcp ordering information see detailed ordering and shipping information on page 2 of this data sheet. advance informatio n this document contains information on a new product. specifcations and information herein are subject to change without notice. stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? 2.5v drive ? common-drain type ? built-in gate protection resistor ? halogen free compliance ? best suited for lib charging and discharging switch specifcations absolute maximum ratings at ta=25c parameter symbol conditions value unit source-to-source voltage v sss 24 v gate-to-source voltage v gss 12 v source current (dc) i s 6 a source current (pulse) i sp pw 10 s, duty cycle 1% 60 a total dissipation p t when mounted on ceramic substrate (5000mm 2 0.8mm) 1.6 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7064-001 product & package information ? package : efcp ? jeita, jedec : - ? minimum packing quantity : 5,000 pcs./reel taping type : tr marking electrical connection tr EFC4630R-tr fn lot no. 1 4 2 3 rg=200 ? rg rg ordering number : ena2320 1 : source1 2 : gate1 3 : gate2 4 : source2 efcp1313-4cc-037 1.26 1.26 1 12 43 2 43 0.65 0.65 0.22 0.15 0.3
EFC4630R no.a2320-2/6 electrical characteristics at ta=25c parameter symbol conditions value unit min typ max source-to-source breakdown voltage v (br)sss i s =1ma, v gs =0v test circuit 1 24 v zero-gate voltage source current i sss v ss = 2 0v, v gs =0v test circuit 1 1 a gate-to-source leakage current i gss v gs =8v, v ss =0v test circuit 2 10 a gate threshold voltage v gs (th) v ss =10v, i s =1ma test circuit 3 0.5 1.3 v forward transconductance g fs v ss =10v, i s = 3 a test circuit 4 3.1 s static source-to-source on-state resistance r ss (on)1 i s =3a, v gs =4.5v test circuit 5 24 39 45 m ? r ss (on)2 i s =3a, v gs =4.0v test circuit 5 25 41 48 m ? r ss (on)3 i s =3a, v gs =3.7v test circuit 5 27.5 43 50 m ? r ss (on)4 i s =3a, v gs =3.1v test circuit 5 31.5 48 57 m ? r ss (on)5 i s =3a, v gs =2.5v test circuit 5 33.5 58 72 m ? turn-on delay time t d (on) see specifed test circuit. test circuit 6 20 ns rise time t r 230 ns turn-off delay time t d (off) 130 ns fall time t f 210 ns total gate charge qg v ss =10v, v gs =4.5 v, i s =6a test circuit 7 7 nc forward source-to-source voltage v f(s-s) i s =3a, v gs =0v test circuit 8 0.8 1.2 v ordering information device package shipping memo EFC4630R-tr efcp 5,000pcs./reel pb-free and halogen free product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
EFC4630R no.a2320-3/6 test circuits are example of measuring fet1 side g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 v is vgs=0v g2 g1 s1 s2 v is g2 g1 s1 s2 pg rl a g2 g1 s1 s2 v pg rl test circuit 1 i sss test circuit 2 i gss test circuit 3 v gs (th) test circuit 4 g fs test circuit 5 test circuit 8 v f(s-s) r ss (on) test circuit 6 test circuit 7 qg t d (on), t r , t d (off), t f when fet1 is measured,+4.5v is added to v gs of fet2. v gs v gs v gs v gs i g =1ma when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited. v ss v ss v ss v ss v ss when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited. when fet2 is measured, the position of fet 1 and fet 2 is switched.
EFC4630R no.a2320-4/6 gate-to-source vo ltage, v gs - - v static source-to-source on-state resistance, r ss (on) - - m? ambient temperature, t a - - c r ss (on) - - t a r ss (on) - - v gs static source-to-source on-state resistance, r ss (on) - - m? i s - - v gs(th) source current, i s - - a gate-to-source vo ltage, v gs - - v i s - - v f(s-s) source current, i s - - a forward source-to-source vo ltage, v f(s-s) - - v 0 0.2 0.4 1.2 0.8 1.0 0.6 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 0 hd14681 0 0.5 1.0 1.5 2.0 1 4 2 5 3 6 v ss =10v - -25 c ta =75 c 25 c it14684 - -25 c 25 c t a=75c v gs =0v 10 7 5 3 sw time - - i s switching t ime, s w t ime - - ns source current, i s - - a to tal gate cha rg e, qg - - nc v gs - - qg gate-to-source vo ltage, v gs - - v 100 7 5 3 10 2 2 1000 7 5 3 0.01 2 0.1 35 72 10 35 7 it14685 v ss =10v v gs =4.5v t d (o ff ) t r t f 2 1.0 35 7 t d (on) 0 1234567 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it14686 v ss =10v i s =6a - -60 - -40 - -20 02 04 06 08 0 100 120 140 160 0 20 60 40 100 120 140 80 v gs =2.5v , i s =3a v gs =4.5v , i s =3a v gs =3.1v , i s =3a it14683 it14682 ta =25c i s =3a 06 4 28 10 0 20 40 60 100 120 80 140 v gs =4.0v , i s =3a v gs =3.7v , i s =3 a i s - - v ss source current, i s - - a source-to-source vo ltage, v ss - - v it14720 0 0 6.0 5.0 5.5 4.0 4.5 3.0 3.5 0.6 2.0 0.2 1.8 1.0 1.4 0.8 0.4 1.2 1.6 2.0 2.5 1.0 0.5 1.5 v gs =1.5v 2.5v 4.0v 3.1v 4.5v 10.0v s o a source-to-source vo ltage, v ss - - v source current, i s - - a operation in this area is limited by r ss (on). dc operatio n 100 s 1ms 10ms 100ms hd14721 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 2 3 5 5 7 7 10 100 0.01 0.1 0.01 57 23 25 7 23 3 2 57 3 1.0 10 5 i sp =60a i s =6a (pw10s) ta =25 c single pulse when mounted on ceramic substrate (5000mm 2 0.8mm)
EFC4630R no.a2320-5/6 ambient t emperature, ta - - c p t - - t a to tal dissipation, p t - - w it14722 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 1.6 1.4 0.2 0.8 1.2 1.8 when mounted on ceramic substrate (5000mm 2 0.8mm)
EFC4630R ps no.a2320-6/6 note on usage : since the EFC4630R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. outline drawing land pattern example EFC4630R-tr mass (g) unit (0.0011) * for reference mm unit: mm 0.65 0.65 0.3
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